IMAGING DEVICE AND SIGNAL PROCESSING DEVICE

To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first se...

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Main Authors NAKAZAWA, Keiichi, TAKEYA, Yukari, SAKANO, Yorito, OGI, Jun, ZHU, Hongbo, HORIUCHI, Atsushi, TOYOSHIMA, Takahiro, TASHIRO, Yoshiaki, MATSUMOTO, Ryosuke, OIKE, Yusuke, OKUYAMA, Atsushi, MIYOSHI, Yasufumi
Format Patent
LanguageEnglish
Published 19.11.2020
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Summary:To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.
Bibliography:Application Number: US202016987745