METHOD OF GROWING SEMICONDUCTOR LAYERS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF GROWING BALK CRYSTAL
A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the firs...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
19.11.2020
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Subjects | |
Online Access | Get full text |
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Summary: | A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer. |
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Bibliography: | Application Number: US202016859160 |