METHOD OF GROWING SEMICONDUCTOR LAYERS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF GROWING BALK CRYSTAL

A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the firs...

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Bibliographic Details
Main Authors TAHARA, Daisuke, NAGAOKA, Tatsuji, NISHINAKA, Hiroyuki, YOSHIMOTO, Masahiro
Format Patent
LanguageEnglish
Published 19.11.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.
Bibliography:Application Number: US202016859160