PIEZOELECTRIC FILM CAVITY STRUCTURE FOR A BULK ACOUSTIC WAVE (BAW) RESONATOR AND METHOD THEREFOR

A method for forming a Bulk Acoustic Wave (BAW) structure comprises forming a piezoelectric material on a first substrate; applying a first metal layer on a top surface of the piezoelectric material; forming a metal pattern on a second substrate, the metal pattern forming a cavity pattern between ra...

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Bibliographic Details
Main Authors Pao, Yi-Ching, Pao, James, Riaziat, Majid
Format Patent
LanguageEnglish
Published 12.11.2020
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Summary:A method for forming a Bulk Acoustic Wave (BAW) structure comprises forming a piezoelectric material on a first substrate; applying a first metal layer on a top surface of the piezoelectric material; forming a metal pattern on a second substrate, the metal pattern forming a cavity pattern between raised areas of the metal pattern; attaching the first metal layer to a top area of the metal pattern forming a plurality of cavity areas; removing the first substrate; and applying a second metal layer on a bottom surface of the piezoelectric material.
Bibliography:Application Number: US202016867133