NEAR-INFRARED PHOTODETECTOR SEMICONDUCTOR DEVICE

The near-infrared photodetector semiconductor device comprises a semiconductor layer (1) of a first type of conductivity with a main surface (10), a trench or a plurality of trenches (2) in the semiconductor layer at the main surface, a SiGe alloy layer (3) in the trench or the plurality of trenches...

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Bibliographic Details
Main Authors Löffler, Bernhard, Meinhardt, Gerald, Jonak-Auer, Ingrid
Format Patent
LanguageEnglish
Published 05.11.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The near-infrared photodetector semiconductor device comprises a semiconductor layer (1) of a first type of conductivity with a main surface (10), a trench or a plurality of trenches (2) in the semiconductor layer at the main surface, a SiGe alloy layer (3) in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.
Bibliography:Application Number: US201816763894