SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device includes a substrate, first and second P-type well regions on the substrate, an N-type well region on the substrate and sandwiched between the first and second P-type well regions, a first peripheral circuit on a region of the first P-type well region adjacent to the N-...

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Main Authors KATAOKA, Hideyuki, KAMATA, Yoshihiko, KOBAYASHI, Tsukasa, FUJIMOTO, Takumi, SHIMIZU, Yuki, SHIMIZU, Yuui, SUZUKI, Yoshinao, KATO, Koji
Format Patent
LanguageEnglish
Published 05.11.2020
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A semiconductor memory device includes a substrate, first and second P-type well regions on the substrate, an N-type well region on the substrate and sandwiched between the first and second P-type well regions, a first peripheral circuit on a region of the first P-type well region adjacent to the N-type well region and supplied with a reference voltage via a first wiring, and a second peripheral circuit on a region of the second P-type well region adjacent to the N-type well region and supplied with a reference voltage via a second wiring.
Bibliography:Application Number: US202016934978