METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

A 4H-SiC single crystal having good morphology while preventing heterogeneous polymorphs from being mixed in regardless of the presence or absence of doping in growing a 4H-SiC single crystal by the TSSG method is obtained. When the off-angle on the grown crystal in a method for producing a SiC sing...

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Bibliographic Details
Main Authors KUMAGAI, Kazuto, UMEZAKI, Tomonori
Format Patent
LanguageEnglish
Published 05.11.2020
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A 4H-SiC single crystal having good morphology while preventing heterogeneous polymorphs from being mixed in regardless of the presence or absence of doping in growing a 4H-SiC single crystal by the TSSG method is obtained. When the off-angle on the grown crystal in a method for producing a SiC single crystal by a TSSG method is set to 60 to 68°, heterogeneous polymorphs are less likely to be mixed in during the growth of 4H-SiC single crystal, and if, during that period, a meltback method is used to smooth the surface of the seed crystal and then grow the crystal, it is possible to obtain a grown crystal having good morphology.
Bibliography:Application Number: US201816758572