MEMORY DEVICES, CROSS-POINT MEMORY ARRAYS AND METHODS OF FABRICATING A MEMORY DEVICE

According to various non-limiting embodiments a memory device may include a silicon-on-insulator layer having a conductivity of a first polarity, a first raised structure over the silicon-on-insulator layer, the second raised structure over the silicon-on-insulator layer, an dummy gate arranged betw...

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Bibliographic Details
Main Authors TOH, Eng Huat, CHANG, Wei, JAIN, Ruchil Kumar, TAN, Shyue Seng
Format Patent
LanguageEnglish
Published 22.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to various non-limiting embodiments a memory device may include a silicon-on-insulator layer having a conductivity of a first polarity, a first raised structure over the silicon-on-insulator layer, the second raised structure over the silicon-on-insulator layer, an dummy gate arranged between the first raised structure and the second raised structure, and a memory connected to the second raised structure. The first raised structure may have a conductivity of the first polarity, and the second raised structure may include a first diode layer having a conductivity of a second polarity opposite to the first polarity.
Bibliography:Application Number: US201916387614