SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device according to an embodiment includes a memory chip and a circuit chip. The memory chip includes first and second joint metals. The circuit chip includes first and second sense amplifiers, and third and fourth joint metals facing the first and second joint metals, respect...
Saved in:
| Main Authors | , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
22.10.2020
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | A semiconductor memory device according to an embodiment includes a memory chip and a circuit chip. The memory chip includes first and second joint metals. The circuit chip includes first and second sense amplifiers, and third and fourth joint metals facing the first and second joint metals, respectively. The first sense amplifier includes first and second active regions. The first active region includes a first transistor coupled between the third joint metal and the second active region. The second amplifier includes third and fourth active region. The third active region includes a second transistor coupled between the fourth joint metal and the fourth active region. The third and fourth joint metals overlap the first and third active regions, respectively. |
|---|---|
| AbstractList | A semiconductor memory device according to an embodiment includes a memory chip and a circuit chip. The memory chip includes first and second joint metals. The circuit chip includes first and second sense amplifiers, and third and fourth joint metals facing the first and second joint metals, respectively. The first sense amplifier includes first and second active regions. The first active region includes a first transistor coupled between the third joint metal and the second active region. The second amplifier includes third and fourth active region. The third active region includes a second transistor coupled between the fourth joint metal and the fourth active region. The third and fourth joint metals overlap the first and third active regions, respectively. |
| Author | MOROZUMI, Naohito MAEJIMA, Hiroshi |
| Author_xml | – fullname: MOROZUMI, Naohito – fullname: MAEJIMA, Hiroshi |
| BookMark | eNrjYmDJy89L5WSQDnb19XT293MJdQ7xD1LwdfX1D4pUcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGBsbGpqaGxo6GxsSpAgC-QCNM |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences Physics |
| ExternalDocumentID | US2020335513A1 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_US2020335513A13 |
| IEDL.DBID | EVB |
| IngestDate | Fri Aug 16 05:55:19 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_US2020335513A13 |
| Notes | Application Number: US202016795763 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201022&DB=EPODOC&CC=US&NR=2020335513A1 |
| ParticipantIDs | epo_espacenet_US2020335513A1 |
| PublicationCentury | 2000 |
| PublicationDate | 20201022 |
| PublicationDateYYYYMMDD | 2020-10-22 |
| PublicationDate_xml | – month: 10 year: 2020 text: 20201022 day: 22 |
| PublicationDecade | 2020 |
| PublicationYear | 2020 |
| RelatedCompanies | KIOXIA CORPORATION |
| RelatedCompanies_xml | – name: KIOXIA CORPORATION |
| Score | 3.290122 |
| Snippet | A semiconductor memory device according to an embodiment includes a memory chip and a circuit chip. The memory chip includes first and second joint metals. The... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| Title | SEMICONDUCTOR MEMORY DEVICE |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201022&DB=EPODOC&locale=&CC=US&NR=2020335513A1 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dS8Mw8Bjz802rom5KQelbcW3Szj0UcWnLFNqOfoz5NPqRgiBz2Ip_30vYdE97zB1ckgt3l0vuA-C-5gPRt6zAExiig2LZRM8Lu9YHJbUsu6RFnctoi9CeZPR1bs078LHJhZF1Qn9kcUSUqBLlvZX6evX_iOXK2MrmoXhH0OeTnzqutvaOTVkhTXPHjjeN3IhpjDlZooWxxBEiupk8o6-0hxfpoQgA82ZjkZey2jYq_gnsT5Hesj2FDl8qcMQ2vdcUOAzWX94KHMgYzbJB4FoOmzPoJYJ9UehmLI1iNfCCKH5TXW_2wrxzuPO9lE10nG_xt71FlmwvjlxAFx1_fglqRbhZFWh_rXpEaWXk1KD1KH8sSV5TbhhX0N9F6Xo3ugfHYij0sGn2odt-ffMbNLBtcSv58gsJinoN |
| link.rule.ids | 230,309,783,888,25578,76884 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_G_JhvWhV1UwdK34prm9btoYhLWzZd27G1Yz6Vph8gyBy24r_vJXS6p73m4JJcuLv8kvsAuC_yHu9bxvAEHhGgGKauJMwslF5KDMNMCSsSEW3hm6OIvCyNZQM-Nrkwok7ojyiOiBqVor5Xwl6v_x-xbBFbWT6wdxz6fHJDy5ZrdKyJCmmyPbScaWAHVKbUiuayPxM0XefdTJ4RK-3hJbvPK-07iyHPS1lvOxX3GPanyG9VnUAjX0nQopveaxIcevWXtwQHIkYzLXGw1sPyFNpzLr7AtyMaBrOu53jB7K1rO4sxdc7gznVCOlJwvvhve3E0316cfg5NBP75BXQzPdcyhv7XKAaEZGpCVFIMkn6qJwXJVfUSOrs4Xe0m30JrFHqTeDL2X9twxEncJmtaB5rV13d-jc62YjdCRr_qq3z9 |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+MEMORY+DEVICE&rft.inventor=MOROZUMI%2C+Naohito&rft.inventor=MAEJIMA%2C+Hiroshi&rft.date=2020-10-22&rft.externalDBID=A1&rft.externalDocID=US2020335513A1 |