Protection Devices with Trigger Devices and Methods of Formation Thereof

A method of forming a semiconductor device includes forming a first vertical protection device comprising a thyristor in a substrate, forming a first lateral trigger element for triggering the first vertical protection device in the substrate, and forming an electrical path in the substrate to elect...

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Bibliographic Details
Main Authors Sojka, Damian, Willemen, Joost Adriaan, Vendt, Vadim Valentinovic, Schmenn, Andre
Format Patent
LanguageEnglish
Published 22.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a semiconductor device includes forming a first vertical protection device comprising a thyristor in a substrate, forming a first lateral trigger element for triggering the first vertical protection device in the substrate, and forming an electrical path in the substrate to electrically couple the first lateral trigger element with the first vertical protection device.
Bibliography:Application Number: US202016919833