SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME

A semiconductor device includes a memory cell formed on a semiconductor substrate. The memory cell includes a first source region and a first drain region that are formed in the semiconductor substrate and a first selection gate, and a first floating gate disposed in series between the first source...

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Main Authors HIRANO, Hiroshige, KURIYAMA, Hiroaki
Format Patent
LanguageEnglish
Published 08.10.2020
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Abstract A semiconductor device includes a memory cell formed on a semiconductor substrate. The memory cell includes a first source region and a first drain region that are formed in the semiconductor substrate and a first selection gate, and a first floating gate disposed in series between the first source region and the first drain region. A first floating gate transistor including the first drain region and the first floating gate has a threshold set lower than a threshold of a first selection gate transistor including the first source region and the first selection gate.
AbstractList A semiconductor device includes a memory cell formed on a semiconductor substrate. The memory cell includes a first source region and a first drain region that are formed in the semiconductor substrate and a first selection gate, and a first floating gate disposed in series between the first source region and the first drain region. A first floating gate transistor including the first drain region and the first floating gate has a threshold set lower than a threshold of a first selection gate transistor including the first source region and the first selection gate.
Author KURIYAMA, Hiroaki
HIRANO, Hiroshige
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Snippet A semiconductor device includes a memory cell formed on a semiconductor substrate. The memory cell includes a first source region and a first drain region that...
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SubjectTerms ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Title SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME
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