SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME
A semiconductor device includes a memory cell formed on a semiconductor substrate. The memory cell includes a first source region and a first drain region that are formed in the semiconductor substrate and a first selection gate, and a first floating gate disposed in series between the first source...
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Format | Patent |
Language | English |
Published |
08.10.2020
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Online Access | Get full text |
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Abstract | A semiconductor device includes a memory cell formed on a semiconductor substrate. The memory cell includes a first source region and a first drain region that are formed in the semiconductor substrate and a first selection gate, and a first floating gate disposed in series between the first source region and the first drain region. A first floating gate transistor including the first drain region and the first floating gate has a threshold set lower than a threshold of a first selection gate transistor including the first source region and the first selection gate. |
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AbstractList | A semiconductor device includes a memory cell formed on a semiconductor substrate. The memory cell includes a first source region and a first drain region that are formed in the semiconductor substrate and a first selection gate, and a first floating gate disposed in series between the first source region and the first drain region. A first floating gate transistor including the first drain region and the first floating gate has a threshold set lower than a threshold of a first selection gate transistor including the first source region and the first selection gate. |
Author | KURIYAMA, Hiroaki HIRANO, Hiroshige |
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RelatedCompanies | TowerJazz Panasonic Semiconductor Co., Ltd |
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Snippet | A semiconductor device includes a memory cell formed on a semiconductor substrate. The memory cell includes a first source region and a first drain region that... |
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Title | SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME |
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