SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME

A semiconductor device includes a memory cell formed on a semiconductor substrate. The memory cell includes a first source region and a first drain region that are formed in the semiconductor substrate and a first selection gate, and a first floating gate disposed in series between the first source...

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Bibliographic Details
Main Authors HIRANO, Hiroshige, KURIYAMA, Hiroaki
Format Patent
LanguageEnglish
Published 08.10.2020
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A semiconductor device includes a memory cell formed on a semiconductor substrate. The memory cell includes a first source region and a first drain region that are formed in the semiconductor substrate and a first selection gate, and a first floating gate disposed in series between the first source region and the first drain region. A first floating gate transistor including the first drain region and the first floating gate has a threshold set lower than a threshold of a first selection gate transistor including the first source region and the first selection gate.
Bibliography:Application Number: US202016905742