ATOMIC LAYER ETCHING ON MICRODEVICES AND NANODEVICES
The present invention relates to the unexpected discovery of novel methods of preparing nanodevices and/or microdevices with predetermined patterns. In one aspect, the methods of the invention allow for engineering structures and films with continuous thickness equal to or less than 50 nm.
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
08.10.2020
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to the unexpected discovery of novel methods of preparing nanodevices and/or microdevices with predetermined patterns. In one aspect, the methods of the invention allow for engineering structures and films with continuous thickness equal to or less than 50 nm. |
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Bibliography: | Application Number: US201716303612 |