SEMICONDUCTOR LASER AND METHOD OF PRODUCTION FOR OPTOELECTRONIC SEMICONDUCTOR PARTS

In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1)...

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Main Authors KÖNIG, Harald, SORG, Jörg Erich, BRUNNER, Herbert, SINGER, Frank, SCHULZ, Roland, HÜTTINGER, Roland, LELL, Alfred, AUEN, Karsten, PESKOLLER, Florian
Format Patent
LanguageEnglish
Published 01.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 μm. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.
Bibliography:Application Number: US201816754723