SEMICONDUCTOR STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor structure for three-dimensional memory device and a manufacturing method thereof are provided. In the manufacturing method, clean plasma is used to clean the impurity doped regions, formed by slit etching, in the surface layer of the substrate to decrease the contact resistance betwe...

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Bibliographic Details
Main Authors Chiu, Yuan-Chieh, Chung, Yao-An
Format Patent
LanguageEnglish
Published 01.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure for three-dimensional memory device and a manufacturing method thereof are provided. In the manufacturing method, clean plasma is used to clean the impurity doped regions, formed by slit etching, in the surface layer of the substrate to decrease the contact resistance between substrate and conductive plugs formed in the slits. The bottom part of the conductive plugs each has a reduced neck structure and an enlarged bottom structure.
Bibliography:Application Number: US201916371579