COMPRESSIVE ZONE TO REDUCE DICING DEFECTS

A semiconductor device that includes a substrate having integrated circuits; a plurality of metallization layers on the substrate, the plurality of metallization layers having a peripheral region adjacent to a kerf region of the semiconductor device and containing a crack stop structure extending th...

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Bibliographic Details
Main Authors Peterson, Kirk D, Pizzuti, Nicolas, Shaw, Thomas M, Wassick, Thomas A
Format Patent
LanguageEnglish
Published 01.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device that includes a substrate having integrated circuits; a plurality of metallization layers on the substrate, the plurality of metallization layers having a peripheral region adjacent to a kerf region of the semiconductor device and containing a crack stop structure extending through the plurality of metallization layers; a trench extending through the plurality of metallization layers and adjacent to the crack stop structure, the trench filled with a material that creates compressive stresses between the filled trench and the adjacent metallization layers to form a compressive zone adjacent to the crack stop structure. Also disclosed is a method for forming the semiconductor device.
Bibliography:Application Number: US201916372323