INTERCONNECTS SEPARATED BY A DIELECTRIC REGION FORMED USING REMOVABLE SACRIFICIAL PLUGS

Structures that include interconnects and methods of forming structures that include interconnects. A first interconnect is formed in a first trench in an interlayer dielectric layer, and a second interconnect in a second trench in the interlayer dielectric layer. The second interconnect is aligned...

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Bibliographic Details
Main Authors Xie, Ruilong, Sun, Lei, Ning, Guoxiang
Format Patent
LanguageEnglish
Published 01.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Structures that include interconnects and methods of forming structures that include interconnects. A first interconnect is formed in a first trench in an interlayer dielectric layer, and a second interconnect in a second trench in the interlayer dielectric layer. The second interconnect is aligned along a longitudinal axis with the first interconnect. A dielectric region is arranged laterally arranged between the first interconnect and the second interconnect. The interlayer dielectric layer is composed of a first dielectric material, and the dielectric region is composed of a second dielectric material having a different composition than the first dielectric material.
Bibliography:Application Number: US201916363585