PHOTODETECTOR AND LIDAR DEVICE
A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semico...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | English |
Published |
17.09.2020
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer. |
---|---|
Bibliography: | Application Number: US201916553221 |