PHOTODETECTOR AND LIDAR DEVICE

A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semico...

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Bibliographic Details
Main Authors KWON, Honam, NOBUSA, Yuki, FUJIWARA, Ikuo, SUZUKI, Kazuhiro, ATSUTA, Masaki, SASAKI, Keita
Format Patent
LanguageEnglish
Published 17.09.2020
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Summary:A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.
Bibliography:Application Number: US201916553221