HETEROJUNCTION TRANSISTOR WITH VERTICAL STRUCTURE

The invention concerns a heterojunction field-effect transistor comprising a stack of first and second III-N type semiconducting layers forming an electron gas or hole layer; a first conduction electrode in electrical contact with the gas layer and a second conduction electrode; a separation layer p...

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Bibliographic Details
Main Authors ESCOFFIER, Rene, LOUDOT, Serge
Format Patent
LanguageEnglish
Published 17.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention concerns a heterojunction field-effect transistor comprising a stack of first and second III-N type semiconducting layers forming an electron gas or hole layer; a first conduction electrode in electrical contact with the gas layer and a second conduction electrode; a separation layer positioned vertically in line with the first electrode and under the second semiconducting layer; a third semiconducting layer arranged under the separation layer and in electrical contact with the second electrode; a conductive element in electrical contact with the gas layer and electrically connecting the third semiconducting layer and the gas layer; and a control gate positioned between the conductive element and the first conduction electrode.
Bibliography:Application Number: US201716464190