JUNCTION FIELD EFFECT TRANSISTOR

• Main Authors: INOTO, Hidekazu, TERADA, Naozumi, TAKATA, Osamu, KITAHARA, Hiroyoshi
• Format: Patent
• Language: English
• Published: 10.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A junction field effect transistor includes a first semiconductor layer of first conductivity type, an element isolation insulator disposed on the first semiconductor layer to partition an active area, a second semiconductor layer of second conductivity type, on the first semiconductor layer in the active area, and having an end in a first direction separated from the element isolation insulator, a source layer of second conductivity type, on the second semiconductor layer, the source layer having an impurity concentration higher than that of the second semiconductor layer, a drain layer of second conductivity type, on the second semiconductor layer, and separated from the source layer in a second direction, the drain layer having an impurity concentration higher than that of the second semiconductor layer, and a gate layer of first conductivity type, on the second semiconductor layer, and between and separated from the source and drain layers.