THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A CHANNEL CONNECTION STRAP AND METHOD FOR MAKING THE SAME

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening extending through the alternating sack, and a memory opening fill structure located within the memory opening. The memory opening fill st...

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Bibliographic Details
Main Authors YUDA, Takashi, KAMIYA, Hiroyuki
Format Patent
LanguageEnglish
Published 10.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening extending through the alternating sack, and a memory opening fill structure located within the memory opening. The memory opening fill structure includes a pedestal channel portion, a memory film overlying the pedestal channel portion, a vertical semiconductor channel located inside the memory film, and a channel connection strap that extends through an opening of the memory film and contacting the pedestal channel portion and the vertical semiconductor channel. The channel connection strap has a topmost surface located below a horizontal plane including a top surface of the vertical semiconductor channel. The channel connection strap portion may be formed by a selective semiconductor growth from physically exposed semiconductor surfaces, and may provide enhanced electrical connection between the pedestal channel portion and the vertical semiconductor channel.
Bibliography:Application Number: US201916295206