Methods And Systems For Measurement Of Thick Films And High Aspect Ratio Structures

• Main Authors: Buettner, Alexander, Peterlinz, Kevin A, Wang, David Y, Purrucker, Kerstin, Sapiens, Noam, Krishnan, Shankar
• Format: Patent
• Language: English
• Published: 10.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; COLORIMETRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT; MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; PHYSICS; RADIATION PYROMETRY; SEMICONDUCTOR DEVICES; TESTING

Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.