SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

• Main Author: YAMAMOTO, Fumitoshi
• Format: Patent
• Language: English
• Published: 03.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A silicon carbide semiconductor device is manufactured without reducing an off-state breakdown voltage. The silicon carbide semiconductor device includes a second diffusion layer of a second conductivity type which is partially formed in a surface layer of a silicon carbide semiconductor layer of a first conductivity type, a third diffusion layer of the second conductivity type which is formed in at least part of a surface layer of the second diffusion layer, and a fourth diffusion layer of the first conductivity type which is partially formed in a surface layer of the third diffusion layer, and the third diffusion layer is formed to be shallower than the second diffusion layer, the fourth diffusion layer is formed inside the third diffusion layer in a cross-sectional view, and the third diffusion layer is asymmetric with respect to the second diffusion layer.