SPLIT-GATE JFET WITH FIELD PLATE

• Main Author: Haynie, Sheldon Douglas
• Format: Patent
• Language: English
• Published: 27.08.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An IC with a split-gate transistor includes a substrate doped the second conductivity type having a semiconductor surface layer doped the first conductivity type. The transistor includes a first doped region formed as an annulus, a second doped region including under the first doped region, and a th...