SPLIT-GATE JFET WITH FIELD PLATE

An IC with a split-gate transistor includes a substrate doped the second conductivity type having a semiconductor surface layer doped the first conductivity type. The transistor includes a first doped region formed as an annulus, a second doped region including under the first doped region, and a th...

Full description

Saved in:
Bibliographic Details
Main Author Haynie, Sheldon Douglas
Format Patent
LanguageEnglish
Published 27.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An IC with a split-gate transistor includes a substrate doped the second conductivity type having a semiconductor surface layer doped the first conductivity type. The transistor includes a first doped region formed as an annulus, a second doped region including under the first doped region, and a third doped region under the second doped region, all coupled together and doped the second conductivity type. A fourth doped region doped the first conductivity type is above the third doped region. A fifth doped region doped the first conductivity type is outside the annulus. Sixth doped regions doped the first conductivity type include a first sixth doped region surrounded by the annulus in the semiconductor surface layer and a second sixth doped region in the fifth doped region. Field oxide includes a field oxide portion between the fifth and the first doped region. A field plate is on the field oxide portion.
Bibliography:Application Number: US201916281626