Power Semiconductor Device and Method of Processing a Power Semiconductor Device

• Main Authors: Santos Rodriguez, Francisco Javier, Pfaffenlehner, Manfred, Brandt, Philip Christoph, Pfirsch, Frank Dieter, Schmidt, Steffen, Umbach, Frank
• Format: Patent
• Language: English
• Published: 20.08.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A power semiconductor device includes a semiconductor body having a drift region of a first conductivity type inside an active region. An edge termination region includes: a guard region of a second conductivity type at a front side of the semiconductor body and surrounding the active region; and a field plate trench structure extending vertically into the body from the front side and at least partially filled with a conductive material that is electrically connected with the guard region and insulated from the body external of the guard region. A first portion of the field plate trench structure at least partially extends into the guard region and is at least partially arranged below a metal layer arranged at the front side. A second portion of the field plate trench structure extends outside of the guard region and surrounds the active area, the metal layer not extending above the second portion.