EUV PATTERN TRANSFER WITH ION IMPLANTATION AND REDUCED IMPACT OF RESIST RESIDUE
A method is presented for amplifying extreme ultraviolet (EUV) lithography pattern transfer into a hardmask and preventing hard mask micro bridging effects due to resist residue in a semiconductor structure. The method includes forming a top hardmask over an organic planarization layer (OPL), deposi...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
06.08.2020
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Subjects | |
Online Access | Get full text |
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Summary: | A method is presented for amplifying extreme ultraviolet (EUV) lithography pattern transfer into a hardmask and preventing hard mask micro bridging effects due to resist residue in a semiconductor structure. The method includes forming a top hardmask over an organic planarization layer (OPL), depositing a photoresist over the top hardmask, patterning the photoresist using EUV lithography, performing ion implantation to create doped regions within the exposed top hardmask and regions of hardmask underneath resist residue, stripping the photoresist, and selectively etching the top hardmask by either employing positive tone or negative tone etch based on an implantation material. |
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Bibliography: | Application Number: US202016801644 |