SEMICONDUCTOR DEVICE

A semiconductor device includes first and second fin patterns on a substrate and extending apart from each other, a field insulating film on the substrate and surrounding parts of the first and second fin patterns, a first gate structure on the first fin pattern and intersecting the first fin patter...

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Main Authors HA, Dae Won, KIM, Dong Hyun, JEON, Yeong Min, PARK, Sung Chul, KIM, Byoung-Gi, YOU, Jung Gun, NAM, Yun Suk
Format Patent
LanguageEnglish
Published 30.07.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes first and second fin patterns on a substrate and extending apart from each other, a field insulating film on the substrate and surrounding parts of the first and second fin patterns, a first gate structure on the first fin pattern and intersecting the first fin pattern, a second gate structure on the second fin pattern and intersecting the second fin pattern, and a separating structure protruding from a top surface of the field insulating film and separating the first and second gate structures, the field insulating film and the separating structure including a same insulating material.
Bibliography:Application Number: US202016848145