FILM FORMATION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English |
Published |
30.07.2020
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace. |
---|---|
Bibliography: | Application Number: US202016741060 |