FILM FORMATION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store...

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Bibliographic Details
Main Authors TAHARA, Daisuke, NAGAOKA, Tatsuji, NISHINAKA, Hiroyuki, YOSHIMOTO, Masahiro
Format Patent
LanguageEnglish
Published 30.07.2020
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Summary:A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace.
Bibliography:Application Number: US202016741060