HIGH-DENSITY HIGH-BANDWIDTH STATIC RANDOM ACCESS MEMORY (SRAM) WITH PHASE SHIFTED SEQUENTIAL READ

The present disclosure relates to a structure including a read controller configured to receive a burst enable signal and a word line pulse signal, identify consecutive read operations from storage cells accessed via a word line, precharge bit lines once during consecutive, sequential reads, and hol...

Full description

Saved in:
Bibliographic Details
Main Authors PATIL, Akhilesh, ARSOVSKI, Igor, HUNT-SCHROEDER, Eric D
Format Patent
LanguageEnglish
Published 30.07.2020
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:The present disclosure relates to a structure including a read controller configured to receive a burst enable signal and a word line pulse signal, identify consecutive read operations from storage cells accessed via a word line, precharge bit lines once during consecutive, sequential reads, and hold the word line active through N−1 of the consecutive read operations, and N is an integer number of the consecutive read operations.
Bibliography:Application Number: US201916256584