PHOTODETECTOR AND METHOD FOR FABRICATING THE SAME

A photodetector includes a substrate, at least one nanowire and a cladding layer. The at least one nanowire is disposed on the substrate and has a semiconductor core. The cladding layer is disposed on sidewalls of the semiconductor core and includes an epitaxial semiconductor film in contact with th...

Full description

Saved in:
Bibliographic Details
Main Authors HSU, Chien-En, XING, Guo-Zhong, HSIEH, Cheng-Yu
Format Patent
LanguageEnglish
Published 23.07.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A photodetector includes a substrate, at least one nanowire and a cladding layer. The at least one nanowire is disposed on the substrate and has a semiconductor core. The cladding layer is disposed on sidewalls of the semiconductor core and includes an epitaxial semiconductor film in contact with the sidewalls of the semiconductor core, a metal film disposed on the outside of the epitaxial semiconductor film and a high-k material layer disposed on the outside of metal film.
Bibliography:Application Number: US201916283895