SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device includes a semiconductor substrate, a capacitor, and an interconnection layer. The capacitor is over the semiconductor substrate and includes a bottom electrode, a top electrode, and an insulator layer. The top electrode has a top surface and a bottom surface rougher than the...

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Bibliographic Details
Main Authors CHOU, You-Hua, HO, Yi-Chen, HUNG, Cheng-Yu, LIN, Chien, HUANG, Hsing-Yuan
Format Patent
LanguageEnglish
Published 23.07.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor substrate, a capacitor, and an interconnection layer. The capacitor is over the semiconductor substrate and includes a bottom electrode, a top electrode, and an insulator layer. The top electrode has a top surface and a bottom surface rougher than the top surface of the top electrode. The insulator layer is between the bottom electrode and the top electrode. The interconnection layer is over the semiconductor substrate and is electrically connected to the capacitor.
Bibliography:Application Number: US201916255567