SEMICONDUCTOR LAMINATE, LIGHT-RECEIVING ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LAMINATE

A semiconductor laminate includes a substrate formed of a group III-V compound semiconductor and a quantum well structure disposed on the substrate. The quantum well structure includes a second element layer formed of a group III-V compound semiconductor and containing Sb and a first element layer f...

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Bibliographic Details
Main Authors FUYUKI, Takuma, DOI, Tomohiro, GO, Takashi, ISHIZUKA, Takashi
Format Patent
LanguageEnglish
Published 25.06.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor laminate includes a substrate formed of a group III-V compound semiconductor and a quantum well structure disposed on the substrate. The quantum well structure includes a second element layer formed of a group III-V compound semiconductor and containing Sb and a first element layer formed of a group III-V compound semiconductor and disposed in contact with the second element layer. In the first element layer, the thickness of a region in which the content of Sb decreases in a direction away from the substrate from 80% of the maximum content of Sb in the second element layer to 6% of the maximum content is from 0.5 nm to 3.0 nm inclusive.
Bibliography:Application Number: US201816635482