Integrated Assemblies Having Charge-Trapping Material Arranged in Vertically-Spaced Segments, and Methods of Forming Integrated Assemblies

• Main Authors: Kim, Woohee, Kim, Changhan, Hopkins, John D
• Format: Patent
• Language: English
• Published: 11.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Some embodiments include a memory array having a vertical stack of alternating insulative levels and wordline levels. The wordline levels include conductive wordline material having terminal ends. Charge blocking material is along the terminal ends of the conductive wordline material and has first v...