Methods For Metal Oxide Post-Treatment
Methods comprising forming a metal oxide film by atomic layer deposition using water as an oxidant are described. The metal oxide film is exposed to a decoupled plasma comprising one or more of He, H2 or O2 to lower the wetch etch rate of the metal oxide film.
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
28.05.2020
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Subjects | |
Online Access | Get full text |
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Summary: | Methods comprising forming a metal oxide film by atomic layer deposition using water as an oxidant are described. The metal oxide film is exposed to a decoupled plasma comprising one or more of He, H2 or O2 to lower the wetch etch rate of the metal oxide film. |
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Bibliography: | Application Number: US201816631979 |