SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.

Saved in:
Bibliographic Details
Main Authors HWANG, Sun-Hwan, JOUNG, Yong-Soo, JEON, Bong-Seok, JANG, Il-Sik, PARK, Ji-Hwan, LEE, Mi-Ri
Format Patent
LanguageEnglish
Published 21.05.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.
Bibliography:Application Number: US202016748370