LDMOS FIN-TYPE FIELD-EFFECT TRANSISTORS INCLUDING A DUMMY GATE

Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming a laterally-diffused metal-oxide-semiconductor device. A fin projects from a substrate, a channel region and a drain extension are arranged in a first section of the fin and the substrate beneath the first se...

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Bibliographic Details
Main Authors Ciavatti, Jerome, Singh, Jagar
Format Patent
LanguageEnglish
Published 30.04.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming a laterally-diffused metal-oxide-semiconductor device. A fin projects from a substrate, a channel region and a drain extension are arranged in a first section of the fin and the substrate beneath the first section of the fin, a source region is arranged in the first section of the fin, a drain region is arranged in a second section of the fin and the substrate beneath the second section of the fin, and a gate structure is arranged over the channel region. The drain region and the source region have an opposite conductivity type from the channel region. A trench isolation region is arranged in the fin between the first section of the fin and the second section of the fin. A dummy gate is arranged over a portion of the second section of the fin.
Bibliography:Application Number: US201816172109