SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

In a memory cell forming region including a dummy cell region, a plurality of fins which are parts of a semiconductor substrate, protrude from an upper surface of an element isolation portion and are formed adjacent to each other, are formed. A distance between a fin closest to a dummy fin among the...

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Bibliographic Details
Main Author UCHIMURA, Katsuhiro
Format Patent
LanguageEnglish
Published 09.04.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a memory cell forming region including a dummy cell region, a plurality of fins which are parts of a semiconductor substrate, protrude from an upper surface of an element isolation portion and are formed adjacent to each other, are formed. A distance between a fin closest to a dummy fin among the plurality of fins and the dummy fin is shorter than a distance between two fins adjacent to each other. As a result, a position of an upper surface of the element isolation portion formed between two fins adjacent to each other and a position of an upper surface of the element isolation portion STI formed between the fin closest to the dummy fin and the dummy fin is lower than a position of an upper surface of the element isolation portion STI formed in a shunt region.
Bibliography:Application Number: US201916572116