BACK END OF LINE INTEGRATION FOR INTERCONNECTS

A method for back end of line (BEOL) integration for one or more interconnects includes forming one or more interconnects by depositing conductive material on a diffusion barrier layer in respective ones of one or more trenches formed within an interlevel dielectric, forming one or more cap layers o...

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Bibliographic Details
Main Authors Peethala, Cornelius B, Patlolla, Raghuveer R, Quon, Roger A, Yang, Chih-Chao
Format Patent
LanguageEnglish
Published 09.04.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for back end of line (BEOL) integration for one or more interconnects includes forming one or more interconnects by depositing conductive material on a diffusion barrier layer in respective ones of one or more trenches formed within an interlevel dielectric, forming one or more cap layers on respective ones of the one or more interconnects, and selectively etching the diffusion barrier relative to the one or more cap layers to remove portions of the diffusion barrier layer along the interlevel dielectric.
Bibliography:Application Number: US201816151390