HIGH TEMPERATURE RF HEATER PEDESTALS

• Main Authors: Wang, Xikun, Lubomirsky, Dmitry, Benjaminson, David, Park, Soonam
• Format: Patent
• Language: English
• Published: 19.03.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Semiconductor processing systems are described, which may include a substrate support assembly having a substrate support surface. Exemplary substrate support assemblies may include a ceramic heater defining the substrate support surface. The assemblies may include a ground plate on which the ceramic heater is seated. The assemblies may include a stem with which the ground plate is coupled. The assemblies may include an electrode embedded within the ceramic heater at a depth from the substrate support surface. The chambers or systems may also include an RF match configured to provide an AC current and an RF power through the stem to the electrode. The RF match may be coupled with the substrate support assembly along the stem. The substrate support assembly and RF match may be vertically translatable within the semiconductor processing system.