Semiconductor Device and Method

In an embodiment, a semiconductor device includes a semiconductor substrate having a first major surface, a trench extending from the first major surface into the semiconductor substrate and having a base and a side wall extending form the base to the first major surface, and a field plate arranged...

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Bibliographic Details
Main Authors Roesch, Maximilian, Leomant, Sylvain, Ehrentraut, Georg
Format Patent
LanguageEnglish
Published 12.03.2020
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Summary:In an embodiment, a semiconductor device includes a semiconductor substrate having a first major surface, a trench extending from the first major surface into the semiconductor substrate and having a base and a side wall extending form the base to the first major surface, and a field plate arranged in the trench and an enclosed cavity in the trench. The enclosed cavity is defined by insulating material and is laterally positioned between a side wall of the field plate and the side wall of the trench.
Bibliography:Application Number: US201916561585