Fabricated Two-Sided Millimeter Wave Antenna Using Through-Silicon-Vias

A system may include a first semiconductor substrate having a first side and a second side opposite the first side. The system may further include multiple device layers positioned on the first side of the substrate. The system may also include a first portion of an antenna structure positioned with...

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Bibliographic Details
Main Authors Kaeding, John F, Fay, Owen R
Format Patent
LanguageEnglish
Published 05.03.2020
Subjects
ANTENNAS, i.e. RADIO AERIALS
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A system may include a first semiconductor substrate having a first side and a second side opposite the first side. The system may further include multiple device layers positioned on the first side of the substrate. The system may also include a first portion of an antenna structure positioned within at least one of the multiple device layers. The system may include a second portion of the antenna structure positioned over the second side of the substrate. The system may further include a via passing through the substrate and electrically coupling the first portion of the antenna structure to the second portion of the antenna structure.
Bibliography:Application Number: US201816118723