Flip-chip Light Emitting Diode Chip and Fabrication Method

A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer ar...

Full description

Saved in:
Bibliographic Details
Main Authors XIONG, Weiping, YANG, Shu-fan, WU, Chun-Yi, YANG, Meijia, WU, Chaoyu, WANG, Duxiang
Format Patent
LanguageEnglish
Published 27.02.2020
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n1>1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n2<n1.
Bibliography:Application Number: US201916666661