SEMICONDUCTOR DEVICES INCLUDING TRANSISTORS COMPRISING A CHARGE TRAPPING MATERIAL, AND RELATED SYSTEMS AND METHODS
A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor comprises a source region, a drain region, a gate electrode between the source region and the drain region, a charge trapping material surrounding at...
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Main Authors | , , , , , , , , , |
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Format | Patent |
Language | English |
Published |
27.02.2020
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Subjects | |
Online Access | Get full text |
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Abstract | A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor comprises a source region, a drain region, a gate electrode between the source region and the drain region, a charge trapping material surrounding at least an upper portion of the gate electrode, and an oxide material on sides of the charge trapping material. Related systems and methods are also disclosed. |
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AbstractList | A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor comprises a source region, a drain region, a gate electrode between the source region and the drain region, a charge trapping material surrounding at least an upper portion of the gate electrode, and an oxide material on sides of the charge trapping material. Related systems and methods are also disclosed. |
Author | Morino, Makoto Nanjo, Yoshiyuki Liu, Haitao Zaleski, Mark A Fishburn, Fredrick D Enomoto, Oscar O Hirofuji, Keisuke Otsuka, Atsuko Sugiura, Soichi Abe, Ichiro |
Author_xml | – fullname: Zaleski, Mark A – fullname: Morino, Makoto – fullname: Otsuka, Atsuko – fullname: Sugiura, Soichi – fullname: Fishburn, Fredrick D – fullname: Hirofuji, Keisuke – fullname: Liu, Haitao – fullname: Enomoto, Oscar O – fullname: Abe, Ichiro – fullname: Nanjo, Yoshiyuki |
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Notes | Application Number: US201816107324 |
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Snippet | A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SEMICONDUCTOR DEVICES INCLUDING TRANSISTORS COMPRISING A CHARGE TRAPPING MATERIAL, AND RELATED SYSTEMS AND METHODS |
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