SEMICONDUCTOR DEVICES INCLUDING TRANSISTORS COMPRISING A CHARGE TRAPPING MATERIAL, AND RELATED SYSTEMS AND METHODS

A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor comprises a source region, a drain region, a gate electrode between the source region and the drain region, a charge trapping material surrounding at...

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Main Authors Zaleski, Mark A, Morino, Makoto, Otsuka, Atsuko, Sugiura, Soichi, Fishburn, Fredrick D, Hirofuji, Keisuke, Liu, Haitao, Enomoto, Oscar O, Abe, Ichiro, Nanjo, Yoshiyuki
Format Patent
LanguageEnglish
Published 27.02.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor comprises a source region, a drain region, a gate electrode between the source region and the drain region, a charge trapping material surrounding at least an upper portion of the gate electrode, and an oxide material on sides of the charge trapping material. Related systems and methods are also disclosed.
Bibliography:Application Number: US201816107324