METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE

A method for forming a semiconductor device structure is provided. The method includes forming a gate stack and a conductive layer over a semiconductor substrate. The method includes forming a negative photoresist layer to cover the gate stack and a first portion of the conductive layer over the iso...

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Bibliographic Details
Main Authors HSU, Shih-Lu, WANG, Chien-Hsian, WU, Cheng-Ming, HSAIO, Ching-Yen
Format Patent
LanguageEnglish
Published 20.02.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a semiconductor device structure is provided. The method includes forming a gate stack and a conductive layer over a semiconductor substrate. The method includes forming a negative photoresist layer to cover the gate stack and a first portion of the conductive layer over the isolation structure and expose a second portion of the conductive layer. The method includes forming a mask layer over the negative photoresist layer and the conductive layer. The mask layer has trenches over the second portion of the conductive layer and an edge portion of the negative photoresist layer, and a thickness of the edge portion decreases in a direction away from the gate stack.
Bibliography:Application Number: US201916662941