SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is formed on the second wiring side. when a ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to an inf...

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Bibliographic Details
Main Authors OMORI, Kazuyuki, SUZUMURA, Naohito
Format Patent
LanguageEnglish
Published 06.02.2020
Subjects
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