SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is formed on the second wiring side. when a ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to an inf...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
06.02.2020
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Subjects | |
Online Access | Get full text |
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