SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is formed on the second wiring side. when a ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to an inf...

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Bibliographic Details
Main Authors OMORI, Kazuyuki, SUZUMURA, Naohito
Format Patent
LanguageEnglish
Published 06.02.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is formed on the second wiring side. when a ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to an infrared absorption intensity corresponding to a bond between silicon and oxygen is defined as an abundance ratio, the abundance ratio in the first defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film. The abundance ratio in the second defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film.
Bibliography:Application Number: US201916521090