SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is formed on the second wiring side. when a ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to an inf...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
06.02.2020
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| Subjects | |
| Online Access | Get full text |
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| Abstract | In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is formed on the second wiring side. when a ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to an infrared absorption intensity corresponding to a bond between silicon and oxygen is defined as an abundance ratio, the abundance ratio in the first defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film. The abundance ratio in the second defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film. |
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| AbstractList | In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is formed on the second wiring side. when a ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to an infrared absorption intensity corresponding to a bond between silicon and oxygen is defined as an abundance ratio, the abundance ratio in the first defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film. The abundance ratio in the second defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film. |
| Author | OMORI, Kazuyuki SUZUMURA, Naohito |
| Author_xml | – fullname: OMORI, Kazuyuki – fullname: SUZUMURA, Naohito |
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| Notes | Application Number: US201916521090 |
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| PublicationDateYYYYMMDD | 2020-02-06 |
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| RelatedCompanies | RENESAS ELECTRONICS CORPORATION |
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| Snippet | In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
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