LASER ANNEALING METHOD
A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step B of selectively irradiating a portion of the amorphous semiconductor film with laser light. The step B includes a step of simultaneously forming, in the po...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
06.02.2020
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Subjects | |
Online Access | Get full text |
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Summary: | A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step B of selectively irradiating a portion of the amorphous semiconductor film with laser light. The step B includes a step of simultaneously forming, in the portion, two molten regions that have elongate shapes congruent to each other and are arranged in line symmetry with each other. |
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Bibliography: | Application Number: US201916503330 |