METHOD OF PRODUCING A SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER

A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one s...

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Bibliographic Details
Main Authors Adlhoch, Thomas, Brückner, John, All, Muhammad, Lell, Alfred, Brüderl, Georg, Gerhard, Sven
Format Patent
LanguageEnglish
Published 23.01.2020
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Summary:A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.
Bibliography:Application Number: US201716335968